Kees Beenakker was born in Leiden in 1948. In 1971 he got his M. Sc.in chemistry and physics at Leiden University and joined as an Ph. D. student the FOM-Institute for Atomic and Molecular Physics in Amsterdam. After graduation in 1974 he joined Philips Research Laboratories in Eindhoven. There he was involved in various research projects related to IC technology. In 1982 he moved to the Philips Semiconductor Division in Nijmegen to become head of the corporate assembly process and equipment development. In that position first intensive contacts were established with the microelectronics industry in the Far East. In 1987 he resigned at Philips and became cofounder of Eurasem, a European hi-rel IC assembly company. In 1989 Kees Beenakker joined Dimes and is since 1990 full professor at the faculty of EEMCS (Electrical Engineering, Mathematics and Computer Science). From 1990 till 2004 he was chairman of the ECTM laboratory. From 1999 till 2009 he was chairman of the department of Microelectronics and Computer Engineering and from March 2007 till May 2012 he was scientific director of DIMES, the Delft institute of microsystems and nanoelectronics. Since May 2012 he is director of the TU Delft-Beijing Research Centre in Beijing and is alternately located in Delft and in Beijing. Kees Beenakker is a member of the national Medea advisory committee, member of the scientific board of the Debije Institute, the ENIAC scientific council and board member of the Advanced Packaging Centre at Boschman Technologies. He is a founder of the Else Kooi Foundation, the SAFE conference, the Tsing Hua-TU Delft training centre of microelectronics technology in Beijing and the Fudan-TU Delft International school of microelectronics in Shanghai. Since March 2006 he holds a honorary guest professorship at the Tsinghua University in Beijing and since 2012 also from the Institute of Semiconductors of the Chinese Academy of Sciences in Beijing. Since June 2008 he is elected chaiman of the academic council of Point-One, the national initiative on nanoelectronics and embedded systems. His specific research interests include technology for thin films and integrated circuits.
S. Vollebregt, R. Ishihara, J. van der Cingel, H. Schellevis, C.I.M. Beenakker
Electrical characterisation of low temperature aligned carbon nanotubes for vertical interconnects
Proc. ICT.OPEN: Micro technology and micro devices (SAFE 2011), 14-15 November 2011, Veldhoven, the Netherlands – poster presentation.
J. Zhang, R. Ishihara, H. Tagagishi, R. Kawajiri, T. Shimoda. C.I.M. Beenakker
Single-grain Si TFTs using spin-coated liquid-silicon
Technical Digest 2011 International Electron Device Meeting (IEDM 2011), 5-7 Dec. 2011, Washington, DC, USA, ISBN 978-1-4577-0505-2, pp. 14.5.1-14.5.4.
S. Vollebregt, R. Ishihara, J. Derakhshandeh, J. van der Cingel, H. Schellevis, C.I.M. Beenakker
Integrating low temperature aligned carbon nanotubes as vertical interconnects in Si technology
Proc. 11th IEEE International Conference on Nanotechnology (NANO 2011), 15-19 August 2011, Portland, OR, USA, pp. 985-990.
J. Tang, H. Ye, J.B.J. Schelen, C.I.M. Beenakker
Plasma decapsulation of plastic IC packages with copper wire bonds for failure analysis
Proc. 12th International Conference on Electronics Packaging Technology & High Density Packaging (ICEPT-HDP 2011), 8-11Augustus 2011, Shanghai, China, ISBN: 978-1-4577-1768-0, pp. 888-892.
R. Ishihara, T. Chen, M. van der Zwan, M. He, H. Schellevis, C.I.M. Beenakker
Single-grain Si TFTs for high-speed flexible electronics
K Blankenbach & L-C Chien (Eds.), Proc. of SPIE: Advances in Display Technologies and E-papers and Flexible Displays, Vol. 7956, Photonics West 2011, January 22-27, 2011, San Francisco, USA, ISBN 9780819484932, pp. 795605/1-9.
Tajari Mofrad, M R, Derakhshandeh, J, Ishihara, R, Baiano, A, Cingel, J van der & Beenakker, C I M
Stacking of Single-Grain Thin-Film Transistors.
Japanese journal of applied physics, (ISSN 0021-4922), 48, 03B015-1-03B015-4.
Vollebregt, S , Derakhshandeh, J , Wu, M Y, Ishihara, R & Beenakker, C I M
Investigating Low Temperature High Density Aligned Carbon Nanotube and Nanofilament Growth using Palladium as Catalyst.
s.n. (Ed.), SAFE 2009 (pp. 125-128). s.l.: STW.
Tajari Mofrad, MR, Ishihara, R, Derakhshandeh, J, Baiano, A, Cingel, J van der & Beenakker, CIM
Simulation and Experimental study of crystallographic orientation control of 2D location controlled single grain crystalline silicon
Proc. of SAFE 2009 (pp. 185-188)
Tajari Mofrad, MR, La Magna, A., Ishihara, R, Derakhshandeh, J, Cingel, J van der & Beenakker, CIM
A three-dimensional phase-field simulation of pulsed laser induced epitaxial growth of silicon
Proceedings of E-MRS Symposium Q Laser and plasma processing for advanced materials E-MRS (pp. 1-4)
Matsuki, N, Ishihara, R, Baiano, A, Hiroshima, Y, Inoue, S & Beenakker, CIM
Characterization of local electrical property of coincidence site lattice boundary in location-controlled silicon islands by scanning probe microscopy
Materials Research Society Symposium Proceedings (pp. 94-99)
Matsuki, N, Ishihara, R & Beenakker, CIM
Direct observation of the electrical activity of coincidence-site lattice boundaries in location-controlled silicon islands using scanning spread resistance microscopy
Journal of the society for information display, 17(3), 293-297
Derakhshandeh, J, Tajari Mofrad, MR, Ishihara, R & Beenakker, CIM
Analog and digital output lateral photodiodes fabricated by "angstrom""micro"-Czochralski process at low temperature
Proc. of DRC 2009 (pp. 93-94). s.l.: IEEE
Chen, T, Ishihara, R, Cingel, J van der, Baiano, A, Tajari Mofrad, MR, Schellevis, H & Beenakker, CIM
Integrated High Performance (100) and (110) Oriented Single-Grain Si TFTs without Seed Substrate
International Electron Devices Meeting (IEDM 2009) (pp. 179-182). Baltimore, MD, USA: IEEE
Expitaxially grown (111) oriented Si film on a crystalline InGaO3(ZnO)5 substrate
AMFPD 09 (pp. 67-68)
Baiano, A, Ishihara, R & Beenakker, CIM
High Performance n- and p-channel Strained Single Grain Silicon TFTs using Excimer Laser
Materials Research Society Symposium Proceedings, 2009 (pp. 1-11). Warrendale, PA: Materials Research Society
M.R Tajari Mofrad, Jaber Derakhshandeh, R. Ishihara and Cees Beenakker
Monolithic Stacking of Single-Grain Thin-Film Transistors to realize high performance three dimensional integrated circuits
Japanese Journal of Applied Physics 48, 2009
J. Derakhshandeh, M.R. Tajari Mofrad, R. Ishihara, J. Van der Cingel and C.I.M Beenakker
A study on CMP effect on the quality of thin silicon film crystallized by "angstrom""micro"-Czochralski process
Journal of Korean Physical Society (JKPS), 2009
R. Ishihara, A. Baiano, T. Chen, J. Derakhshandeh, M.R. Tajari Mofrad, M. Danesh, N. Saputra, J. Long and C.I.M. Beenakker
Single Grain Si TFTs for RF and 3DICs
2009 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors (ULSIC vs. TFT), Xian, China
Negin Golshani, Jaber Derakhshandeh, R. Ishihara and C.I.M Beenakker
High speed 6T SRAM cells using single grain TFTs fabricated by "angstrom""micro"-Czochralski process at low temperature
Proceedings of SAFE 2009, Velhoven, Netherlands
Jaber Derakhshandeh, R. Ishihara and C.I.M Beenakker
Comparing Single Grain and Poly silicon Lateral PIN Photodiodes
Proceedings of SAFE 2009, Velhoven, Netherlands
S. Vollebregt, J. Derakhshandeh, R. Ishihara and C.I.M. Beenakker
Growth of high density aligned carbon nanotubes using palladium as catalyst
Proceedings of Electronic Material conference 2009, USA
Negin Golshani, R. Ishihara, J. Derakhshandeh, and C.I.M Beenakker
Fabrication of 6T SRAM cell using single grain TFTs obtained by "angstrom""micro"-Czochralski process
Proceedings of Active-Matrix and Flat Panel Displays 2009, Nara, Japan
R. Ishihara, J. Derakhshandeh, M.R. Tajari Mofrad, T. Chen and C.I.M. Beenakker
Monolithic 3D-ICs with Single Grain Si TFTs
Proceedings of Active-Matrix and Flat Panel Displays 2009, Tokyo, Japan
Mohammad Reza Tajari Mofrad, Jaber Derakhshandeh, Ryoichi Ishihara and Kees Beenakker
Monolithic Three-Dimensional Stacking of Integrated Circuits with a Low-Temperature Process
Proceedings of SAFE 2008, Velhoven, Netherlands
J. Derakhshandeh, M.R. Tajari Mofrad, R. Ishihara, J. Van der Cingel and C.I.M Beenakker
Optimizing Chemical Mechanical Polishing process in 3D-IC
Proceedings of SAFE 2008, Velhoven, Netherlands
Mohammad Reza Tajari Mofrad, Jaber Derakhshandeh, R. Ishihara and Cees Beenakker
Fabrication of Three-Dimensional Inverters Using the "angstrom""micro"-Czochralski
European Solid-State Device Research Conference 2008, Edinburgh, Scotland
Mohammad Reza Tajari Mofrad, Jaber Derakhshandeh, R. Ishihara and Cees Beenakker
Monolithic Stacking of Single-Grain Thin-Film Transistors
Proceedings of Active-Matrix and Flat Panel Displays 2008, Tokyo, Japan
M.R. Tajari Mofrad, R. Ishihara, J. Derakhshandeh, A. Baiano, J. van der Cingel and C.I.M. Beenakker
Monolithic 3D Integration of Single-Grain Si TFTs
Material Research Society Symposium Proceedings,1066,A20,2008,MRS Spring Meeting, San Francisco, CA, USA
J. Derakhshandeh, M.R. Tajari Mofrad, R. Ishihara, J. van der Cingel and C.I.M Beenakker
CMP effect on the quality of thin silicon film crystallized by "angstrom""micro"-Czochralski process with excimer laser irradiation
The 4th International Thin-Film Transistor Conference ITC 08, Seol, Korea
Chen Tao, Ryoichi Ishihara, J. W .Metselaar, C.I.M Beenakker and Meng-Yue Wu
Location and Crystallographic Orientation Control of Si Grains Through
Combined Metal Induced Lateral Crystallization and micro-Czochralski
process
JJAP, 2008, 47, 3, 1880-1883
N. Matsuki, R. Ishihara, Alessandro Baiano and C.I.M. Beenakker
Investigation of Local Electrical Properties of Coincidence-Site-Lattice
Boundaries in Location-controlled Silicon Islands using Scanning
Capacitance Microscopy
Applied Physics Letters, 2008, 93, 062102-1-3
R. Ishihara, Vikas Rana, Ming He, Y. Hiroshima, S. Inoue, Wim Metselaar and Kees Beenakker
Single-Grain Si TFTs and Circuits Fabricated Through Advanced
Excimer-Laser Crystallization
Solid State Electronics, 2008, 52, 353-358
C. Tao and R. Ishihara and J. W. Metselaar and C. I. M. Beenakker
<110> Orientation and Location Controlled Si Grains Through Combined MILC and "angstrom""micro"-Czochralski Process
Proceeding of The 14th International Display Workshops, Pages 2011-2012, 2007
Nobuyuki Matsuki and Ryoichi Ishihara and Chen Tao and Yasushi Hiroshima and J. W .Metselaar and C.I.M Beenakker
Local electrical properties of coincidence site lattice boundaries in location-controlled silicon islands by scanning capacitance microscopy
AMFPD07, Pages 251-253, 2007
Chen Tao and Ryoichi Ishihara and J. W .Metselaar and C.I.M Beenakker
Location and Orientation Control of Si Grains Through Combined MILC and μ-Czochralski process
AM-FPD07, Pages 271-273, 2007
N. Saputra and M. Danesh and A. Baiano and R. Ishihara and J.R. Long and J.W. Metselaarand and C.I.M. Beenakker and N. Karaki and Y. Hiroshima and S. Inoue
Single-Grain Si Thin-Film Transistors for Analog and RF Circuit Applications
Proceeding of ESSDERC 2007, Pages 107-110, 2007
N. Matsuki and R. Ishihara and A. Baiano and Y. Hiroshima and S. Inoue and C.I.M Beenakker
Local electrical property of coincidence site lattice boundary in location-controlled silicon islands by scanning spread resistance microscopy
Proceeding of The 14th International Display Workshops, Volume 2, Pages 489-492, 2007
N. Matsuki and R. Ishihara and A. Baiano and Y. Hiroshima and S. Inoue and C.I.M Beenakker
Characterization of local electrical property of coincidence site lattice boundary in location-controlled silicon islands by scanning probe microscope
Proceeding of SAFE, 2007
Alessandro Baiano and Ryoichi Ishihara and Nobuo Karaki and Satoshi Inoue and Wim Metselaar and Kees Beenakeer
SPICE Modeling with NQS effect of Single-Grain Si TFTs using BSIMSOI
Proceeding of SAFE, 2007
V. Nadazdy and V. Rana and R. Ishihara and S. Lanyi and R. Durny and J.W. Metselaar and C.I.M. Beenakker
Defect States in Excimer-Laser Crystallized Single-Grain TFTs Studied with Isothermal Charge Deep-level Transient Spectroscopy
Mater. Res. Soc. Proc., 2007
M. He and R Ishihara and C. I. M. Beenakker
Preparation of large, location-controlled Si grains by excimer-laser crystallization of a-Si films sputtered at 100oC
Mater. Res. Soc. Proc., 2007
M. He and R. Ishihara and C. I. M. Beenakker
Single-grain Si TFTs fabricated at 100oC for microelectronics on a plastic substrate
Amorphous and Polycrystalline Thin-Film Silicon Science and Technologyâ2007 MRS Proceedings Volume 989, 2007
Ming He and Ryoichi Ishihara and Wim Metselaar and Kees Beenakker
Agglomeration of amorphous silicon film with high energy density excimer laser irradiation
Thin Solid Films, Vol 515, Pages 2872-2878
R. Ishihara and D. Danciu and F. Tichelaar and M. He and Y. Hiroshima and S. Inoue and T. Shimoda and J.W. Metselaar and C.I.M. Beenakker
Microstructure characterization of location-controlled Si-islands crystallized by excimer laser in the micro-Czochralski (grain filter) process
Journal of Crystal Growth, Vol 299, No 2, Pages 316-321, February 2007
Ming HE and Ryoichi ISHIHARA and Ellen J. J. NEIHOF and Yvonne VAN ANDEL and Hugo SCHELLEVIS and Wim METSELAAR and Kees BEENAKKER
Large Polycrystalline Silicon Grains Prepared by Excimer Laser Crystallization of Sputtered Amorphous Silicon Film with Process Temperature at 100oC
Japanese Journal of Applied Physics, Vol 46, No 3B, Pages 1245-1249, March 2007
M. He
Crystallographic orientation- and location-controlled Si single grains on an amorphous substrate for large area electronics
Delft University of Technology, 10 September 2007, ISBN 978-90-8559-306-5, 151 p., promotor: prof. C.I.M. Beenakker
Preferred <100> surface and in-plane orientations in self-assembled poly-Si by multiple excimer-laser irradiation
Electrochemical Society Transaction, Vol 3, No 8, Pages 167-172, October 2006
Ryoichi Ishihara, Vikas Rana, Ming He, Wim Metselaar and Kees Beenakker
Single-Grain Si TFTs and Circuits for Flexible Electronics and 3D-ICs
2006 8th International Conference on Solid-State and Integrated Circuit Technology (ICSICT), Shanghai, China, Oct. 2006, pages 174-177
M. HE, R. Ishihara, W. Metselaar and Kees Beenakker
Preferred <100> Surface and In-Plane Orientations in Self-Assembled Poly-Si by Multiple Excimer Laser Irradiation
2006 Joint International Meeting of the Electrochemical Society, Symposium 'Thin Film Transistors 8 (TFT8)â held in Universal 19, Expo Center, Cancun, Mexico,
Vanaf - t/m: October 29 - No
V. Nadazdy, V. Rana, R. Ishihara, S. Lanyi, R. Durny, J.W. Metselaar, and C.I.M. Beenakker
Defect States in Excimer-Laser Crystallized Single-Grain TFTs Studied with Isothermal Charge Deep-level Transient Spectroscopy
Polycrystalline Thin-Film Silicon Science and Technology, 2006
M. He, E.J.J. Neihof, Y. van Andel, H. Schellevis, R. Ishihara, J.W. Metselaar, and C.I.M. Beenakker
Preparation of large, location-controlled Si grains by excimer laser crystallization of α-Si film sputtered at 100 °C
Amorphous and Polycrystalline Thin-Film Silicon Science and Technology 2006
M. He, R. Ishihara, E.J.J. Neihof, Y. van Andel, H. Schellevis, C.I.M. Beenakker
Preparation of Large Poly-Si Grains by Excimer Laser Crystallization of Sputtered a-Si film with Processing Temperature of 100 °C
Digest of Technical papers of AM-FPD 06
R. Ishihara, A. Glazer, Y. Raab, P. Rusian, M. Dorfan, B. Lavi, I. Leizerson, A. Kishinevsky, Y. van Andel, X. Cao, J. W. Metselaar, C. I. M. Beenakker, S. Stolyarova and Y. Nemirovsky
A Novel Selected Area Laser Assisted (SALA) System for Crystallization and Doping Processes in Low-Temperature Poly-Si Thin-Film Transistors
Journal of IEICE
2006, Vol. E89-C (10)
pp. 136-140
Ming He, Ryoichi Ishihara, Yasushi Hiroshima, Satoshi Inoue, Tatsuya Shimoda, Wim Metselaar and Kees Beenakker
Effects of Capping Layer on Grain Growth with μ-Czochralski Process during Excimer Laser Crystallization
Japanese Journal of Applied Physics Vol. 45
No. 1A, Part 1, 2006
pp. 1-6
R. Ishihara, A. Glazer, Y. Raab, P. Rusian, M. Dorfan, B. Lavi, I. Leizerson, A. Kishinevsky, Y. van Aandel, X. Cao, J. W. Metselaar, C. I. M. Beenakker, S. Stolyarova and Y. Nemirovsky
A Novel Selected Area Laser Assisted (SALA) System for Crystallization and Doping Processes in Low-Temperature Poly-Si Thin-Film Transistors
R. Ishihara, P.C. van der Wilt, B.D. van Dijk, J.W. Metselaar, C.I.M. Beenakker
Location-control of large grains by micro-Czochralski (grain filter) process and its application to single-crystalline silicon thin-film transistors
Proc. 202nd Meeting of the Electrochemical Societey, Thin Film Transistor Technologies VI, 2002, pp. 63-74.
R. Ishihara, P.Ch. van der Wilt, B.D. van Dijk, A. Burtsev, J.W. Metselaar, C.I.M. Beenakker
Single-Crystalline Si Thin-Film Transistors Fabricated with µ-Czochralski (Grain-Filter) Process
Tech Dig. 2002 Intern. Workshop on Active-Matrix LCDs - TFT Technologies and Rel. Materials, Ed. M. Matsumura, Tokyo, Japan, July 10-12 2002, pp. 53-56.
R. Ishihara, Y. Hiroshima, D. Abe, B.D. van Dijk, P.Ch. van der Wilt, S. Higashi, S. Inoue, T. Shimoda, J.W. Metselaar, C.I.M. Beenakker
Single-crystalline Si thin film transistors with electron cyclotron resonance plasma enhanced chemical vapor deposited gate SiO2
Proc. Eurodisplay 2002, October 2-4, 2002, Nice, France, ISBN 2-9507804-3-1, pp. 407-409.
R. Ishihara, B.D. van Dijk, P.Ch. van der Wilt, J.W. Metselaar, C.I.M. Beenakker
Single-Crystalline Si TFTs Fabricated with Micro-Czochralski (grain-filter) process
Proc. 2nd International Meeting on Information Display, August 21-23, 2002, Daegu, Korea, Eds. Y.B. Kim, I.G. Kang, ISSN 1598-3196, pp. 159-162.
B.A. Korevaar
Integration of Expanding Thermal Plasma deposited hydrogenated amorphous silicon in solar cells.
Mater. Res. Soc. Symp. Proc. 715, 595 (2002)
A. Burtsev, R. Ishihara, C. I. M. Beenakker
Energy Density Window for Location-Controlled Si Grains by Dual-Beam Excimer-Laser.
Thin Solid Films, Vol. 419, No. 1-2, 1 November 2002, ISSN 0040-6090, pp. 199-206.
