ECTM Electronic Components, Technology and Materials
Introducing
168
A. Sakić
Agata Šakić was born in Split, Croatia, in 1985. She received the M.Sc. degree in Electrical Engineering, University of Zagreb, Croatia in 2008. The same year she joined DIMES Institute of Delft University of Technology as a Ph.D. student in the Silicon Device Integration Group of Prof. Lis K. Nanver. Her present research focuses on development of on-chip detection electronics for low energy charged-particles. In 2010 she entered the prestigious Huygens Scholarship Programme.
Contact
Phone:
:
+31-(0)15-27 82185
Office:
:
DI 01.140
Publications on metis:
Publications(24):
Epitaxial growth of large-area p+n diodes at 400 ºC by aluminum-induced crystallization
DOI
Applications of PureB and PureGaB ultrashallow junction technologies
Modelling of electrical characteristics of ultrashallow pure amorphous boron p+n junctions
High-efficiency silicon photodiode detector for sub-keV electron microscopy
DOI
Silicon technology for integrating high-performance low-energy electron photodiode detector
document
Pure dopant deposition of B and Ga for ultrashallow junctions in Si-based devices
DOI
Arsenic-doped high-resistivity-silicon epitaxial layers for integrating low-capacitance diodes
DOI
Patent application title: "Radiation Detector"
document
Solid-state backscattered-electron detector for sub-keV imaging in scanning electron microscopy
On the uniformity of pure-boron-layer depositions
Series resistance optimization of high-sensitivity Si-based VUV photodiodes
document DOI
Optimization of the perimeter doping of ultrashallow p+-n--n+ photodiodes
document
Boron-layer silicon photodiodes for high-efficiency low-energy electron detection
document DOI
The influence of stacking faults on the leakage current of B-layer p+n diodes.
document
Ultrashallow junction silicon photdiodes for detection of low energy electrons,
document
Pure-Boron Chemical-Vapor-Deposited Layers: a New Material for Silicon Device Processing
document
Versatile Silicon Photodiode Detector Technology for Scanning Electron Microscopy with High-Efficiency Sub-5 keV Electron Detection
document
Optical Stability Investigation of High-Performance Silicon-Based VUV Photodiode
document
New Solid State Detector Design for Ultra-Sensitive Back-Scattered Electron Detection
Characterization of amorphous boron layers as diffusion barrier for pure aluminium
document
Silicon Photodiodes for High-Efficiency Low-Energy Electron Detection
document
Al-mediated Solid-Phase Epitaxy of Silicon-On-Insulator
document
Application of amorphous boron layer as diffusion barrier for pure aluminium
document
Influence of Scaling and Source/Drain Series Resistance on the Characteristics of Ultra-Thin Body FinFETs
document